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SUD50N03-10P

30 0.010 @ v gs = 10 v 50 a 30 0.015 @ v gs = 4.5 v 45 d g s n-channel mosfet to-252 s gd top view drain connected to tab order number: SUD50N03-10P
drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 50 a a continuous drain current (t j = 175 c) t c = 100 c i d 40 a pulsed drain current i dm 180 a continuous source current (diode conduction) a i s 50 maximum power dissipation t c = 25 c p d 65 c w maximum power dissipation t a = 25 c p d 5 b w operating junction and storage temperature range t j , t stg 55 to 175 c maximum junction-to-ambient b r thja 30 c/w maximum junction-to-case r thjc 2.3 c/w notes: a. package limited. b. surface mounted on fr4 board, t 10 sec. c. see soa curve for voltage derating. updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70822. n-channel 30 v (d-s) 175 c mosfet www.freescale.net.cn 1 / 5

drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v gate threshold voltage v gs(th) v ds = v gs , i ds = 250 a 1 2 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zgvl dic i v ds = 24 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 125 c 50 v ds = 24 v, v gs = 0 v, t j = 175 c 150 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 50 a dis os r i b v gs = 10 v, i d = 25 a 0.0075 0.010 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 15 a, t j = 125 c 0.016 drain - source on - state resistance b r ds( on ) v gs = 10 v, i d = 15 a, t j = 175 c 0.019 v gs = 4.5 v, i d = 15 a 0.011 0.015 forward transconductance b g fs v ds = 15 v, i d = 15 a 20 40 s
input capacitance c iss v 0 v v 25 v f 1 mh 2700 f output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 680 pf reversen transfer capacitance c rss 360 total gate charge c q g v15vv10vi50a 45 70 c gate-source charge c q gs v ds = 15 v, v gs = 10 v, i d = 50 a 8.5 nc gate-drain charge c q gd 9.5 turn-on delay time c t d(on) 12 20 rise time c t r v dd = 15 v, r l = 0.3 7 15 ns turn-off delay time c t d(off) dd , l i d 50 a, v gen = 10 v, r g = 2.5 35 60 ns fall time c t f 12 20

continuous current i s 50 a pulsed current i sm 180 a forward voltage b v sd i f = 50 a, v gs = 0 v 1.2 1.5 v reverse recovery time t rr i f = 50 a, di/dt = 100 a/ s 40 80 ns notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature. www.freescale.net.cn 2 / 5 SUD50N03-10P n-channel 30 v (d-s) 175 c mosfet
typical characteristics (25 c unless otherwise noted) 0 1000 2000 3000 4000 0 6 12 18 24 30 0 2 4 6 8 10 0 1020304050 0 20 40 60 80 0 1020304050 0 0.005 0.010 0.015 0.020 0.025 0.030 0 20406080100 0 20 40 60 80 100 012345 0 30 60 90 120 150 180 0246810

v ds drain-to-source voltage (v) v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) i d drain current (a) v ds drain-to-source voltage (v) c capacitance (pf) v gs transconductance (s) g fs 25 c 55 c 3 v t c = 125 c v ds = 15 v i d = 50 a v gs = 10 thru 7 v 5 v v gs = 10 v c iss c oss c rss t c = 55 c 25 c 125 c 4 v v gs = 4.5 v on-resistance ( r ds(on) ) drain current (a) i d 6 v i d drain current (a) www.freescale.net.cn 3 / 5 SUD50N03-10P n-channel 30 v (d-s) 175 c mosfet
typical characteristics (25 c unless otherwise noted) 0 0.4 0.8 1.2 1.6 2.0 2.4 50 25 0 25 50 75 100 125 150 175 & " ! ! !& # t j junction temperature ( c) v sd source-to-drain voltage (v) source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 50 a t j = 25 c t j = 150 c (normalized) on-resistance ( r ds(on) ) 0 thermal ratings 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 v ds drain-to-source voltage (v) 1000 10 0.1 1 10 100 1 100 t c = 25 c single pulse
$! ! " ! t c case temperature ( c) drain current (a) i d 1 ms 10 ms 100 ms dc 10 s 100 s % ! & & square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 1 normalized effective transient thermal impedance 3 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 drain current (a) i d limited by r ds(on) 1. duty cycle, d = 2. per unit base = r thja = 30 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm www.freescale.net.cn 4 / 5 SUD50N03-10P n-channel 30 v (d-s) 175 c mosfet
www.freescale.net.cn 5 / 5 disclaimer material category policy all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. freestyle intertechnology, inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, ?freestyle?), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on freestyle?s knowledge of typical requirements that are often placed on freestyle products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customer?s responsib ility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customer?s technical experts. product specifications do not expand or otherwise modify freestyle?s terms and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the freestyle product could result in personal injury or death. customers using or selling freestyle products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold freestyle and its distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay freestyle intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the european parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some freestyle documentation may still make reference to rohs directive 2002/95/ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. SUD50N03-10P n-channel 30 v (d-s) 175 c mosfet

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